Methods and apparatus for controlling substrate uniformity

ABSTRACT

A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the phyisical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

RELATED APPLICATIONS

This application claims priority to U.S. patent application Ser. No.61/638,940, filed on Apr. 26, 2012, and U.S. patent application Ser. No.61/709,593, filed on Oct. 4, 2012, both of which are incorporated byreference in their entirety.

BACKGROUND

1. Field of the Invention

The present invention generally relates to methods and apparatus forsemiconductor manufacturing. Specifically, embodiments described hereinrelate to plasma processing chambers and process kits for semiconductorsubstrates.

2. Description of the Related Art

Integrated circuits have evolved into complex devices that can includemillions of components (e.g., transistors, capacitors and resistors) ona single chip. The evolution of chip designs continually requires fastercircuitry and greater circuit density. The demands for greater circuitdensity necessitate a reduction in the dimensions of the integratedcircuit components.

For over 50 years, the number of transistors formed on an integratedcircuit has doubled approximately every two years. Thistwo-year-doubling trend, also known as Moore's Law, is projected tocontinue, with devices formed on semiconductor chips shrinking from thecurrent critical dimension of 20-30 nm to 0-5 nm in future fabricationprocesses currently being designed. As device geometries shrink,fabrication geometries grow. As the 300 mm wafer replaced the 128 mmwafer years ago, the 300 mm wafer will shortly be replaced by the 450 mmwafer. With processing of large area semiconductor substrate growing insophistication, even larger fabrication geometries for logic chips maybe within reach.

Uniformity in processing conditions has always been important tosemiconductor manufacturing, and as critical dimensions of devicescontinue to decline and fabrication geometries increase, tolerance fornon-uniformity also declines. Non-uniformity arises from numerouscauses, which may be related to device properties, equipment features,and the chemistry and physics of fabrication processes. As thesemiconductor manufacturing industry progresses along Moore's Law, thereis a continuing need for fabrication processes and equipment capable ofvery uniform processing.

SUMMARY

Embodiments described herein provide a dynamically tunable process kit,a processing chamber having a dynamically tunable process kit, and amethod for processing a substrate using a dynamically tunable processkit. The dynamically tunable process kit allows for one or both of theelectrical and thermal state of the process kit to be changed withoutchanging the phyisical construction of the process kit, thereby allowingplasma properties, and hence processing results, to be easily changedwithout replacing the process kit.

In one embodiment, a process kit for a plasma processing chamber isprovided that includes a top ring and a base ring adapted toconcentrically support the top ring. The top and base rings have aninside diameter selected to circumscribe a semiconductor wafer. The basering has a connector configured to couple a signal to the base ring forexternal control of one or both of a thermal state and an electricalstate of the base ring.

In another embodiment, a processing chamber having a dynamically tunableprocess kit is provided. The processing chamber includes a chamber bodyhaving a substrate transfer opening and an internal volume, the chamberbody includes a conductive side wall having a first portion configuredto be electrically controlled independently from remaining portions ofthe conductive side wall. A substrate support assembly is disposed inthe internal volume of the chamber body and has a process kit disposedthereon. The process kit includes a top ring and a base ring adapted toconcentrically support the top ring. The top and base rings have aninside diameter selected to circumscribe a semiconductor wafer. The basering has a connector configured to couple a signal to the base ring forexternal control of one or both of a thermal state and an electricalstate of the base ring.

In yet another embodiment, a method for processing a substrate in aprocessing chamber is provided that includes transferring a substrateinto the processing chamber having a process kit disposed on a substratesupport assembly. The process kit includes a base ring adapted toconcentrically support a top ring, the top and base rings having aninside diameter selected to circumscribe a semiconductor wafer. The basering has a connector configured to couple a signal to the base ring forexternal control of one or both of a thermal state and an electricalstate of the base ring. The method further includes setting one or bothof electrical and thermal states of the process kit, forming a plasmawithin the processing chamber, and processing the substrate in thepresence of the plasma.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention are attained and can be understood in detail, a moreparticular description of the invention, briefly summarized above, maybe had by reference to the embodiments thereof which are illustrated inthe appended drawings.

FIG. 1 depicts a schematic cross-sectional view of a plasma processingchamber having a dynamically tunable process kit according to oneembodiment;

FIG. 2 depicts an enlarged partial schematic cross-sectional view of theplasma processing chamber and having a dynamically tunable process kitof FIG. 1;

FIG. 3 depicts a partial schematic cross-sectional view of anotherembodiment of a plasma processing chamber having a dynamically tunableprocess kit;

FIG. 4 depicts a partial schematic cross-sectional view of anotherembodiment of a plasma processing chamber having a dynamically tunableprocess kit; and

FIG. 5 depicts a partial schematic cross-sectional view of anotherembodiment of a plasma processing chamber having a dynamically tunableprocess kit.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

It is to be noted, however, that the appended drawings illustrate onlyexemplary embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

DETAILED DESCRIPTION

Embodiments described herein provide a dynamically tunable process kit,a processing chamber having a dynamically tunable process kit, and amethod for processing a substrate using a dynamically tunable processkit. Advantageously, the dynamically tunable process kit allows for oneor both of the electrical and thermal state of the process kit to bechanged without changing the physical construction of the process kit,thereby allowing plasma properties, and hence processing results, to beeasily changed without replacing the process kit. The dynamicallytunable process kit allows for greater process flexibility and reducedchamber downtime as processes conventionally requiring process kitshaving different physical construction may now be run using a singleprocess kit whose electrical state and/or temperature is tunable toenable to emulate the results which could previously be obtained only byexchanging one process kit for another.

FIG. 1 is a schematic cross-sectional view of a processing chamber 100according to one embodiment. Processing chamber 100 may include, but isnot limited to, a capacitatively coupled plasma processing chambers,inductively coupled plasma processing chambers, and the like. Althoughthe processing chamber 100 is depicted in FIG. 1 as an etch chamber, theprocessing chamber 100 may be configured as a physical vapor deposition(PVD) chamber, chemical vapor deposition (CVD) chamber, an ion implantchamber, a plasma treatment chamber, an ashing chamber or other plasmaprocessing chamber.

The processing chamber 100 includes a conductive chamber body 102, whichmay be aluminum or stainless steel, or other suitable material. Thechamber body 102 comprises a conductive side wall 108 and bottom wall110, which enclose an internal volume. The side wall 108 is connected toan electrical ground 122. The chamber body 102 has a substrate transferopening 104 disposed in side wall 108. The chamber body 102 has apumping port coupled to a pumping system 124 for controlling pressurewithin the internal volume of the chamber body and for removing processby-products during processing.

A substrate transfer opening 104 allows substrates to be transferredinto and out of the processing chamber 100 and is sealable via a slitvalve (not shown). A substrate handling device, such as a robot (notshown), is utilized to transfer a substrate 106 into and out of theprocessing chamber 100 through the substrate transfer opening 104.

The processing chamber 100 includes an upper electrode 112. In oneembodiment, the upper electrode 112 is coupled to a RF power source 118through a matching circuit 120 and is utilized for generating and/ormaintaining a plasma 116 in the internal volume of the processingchamber 100. In one embodiment, upper electrode 112 is a gas distributorcoupled to a gas panel 114 to admit process gasses into processingchamber 100 from which the plasma 116 is formed. Gas distributor 112 maybe a nozzle, a gas distribution plate, or the like. It is contemplatedthat the gasses may be introduced into the internal volume in anothermanner. In another embodiment (not shown), a separate electrode may beutilized to couple RF power source 118 and matching circuit 120 to formthe plasma 116 in processing chamber 100.

A substrate support assembly 126 having a ring-shaped process kit 128disposed thereon is disposed in the internal volume of the chamber body102. The substrate support assembly 126 may be supported from the bottomwall 110 or the side wall 108 of the chamber body. Substrate supportassembly 126 may include a lower electrode 130 positioned below upperelectrode 112. In one embodiment, the lower electrode 130 is coupled toa RF power source 132 through a matching circuit 136.

The substrate support assembly 126 may include an electrostatic chuckdisposed on a cooling base 160. The electrostatic chuck may be coupledto the RF power source 132 through a matching circuit 136. The coolingbase 160 has temperature control elements, such as conduits for flowinga heat transfer fluid, utilized control the temperature of theelectrostatic chuck.

The process kit 128 is disposed on an outer perimeter of theelectrostatic chuck and substantially circumscribes the substrate 106.In one embodiment, the process kit 128 is insulated from the outerperimeter of the electrostatic chuck, the outer perimeter of the coolingbase 160 and/or the lower electrode 130 by a suitable insulatingmaterial 180. In one embodiment, the process kit 128 is coupled to acontrol system 150 such that the electrical state of the process kit 128may be controlled.

FIG. 2 is a partial schematic cross-sectional view of the processingchamber 100 of FIG. 1 illustrating the process kit 128 in greaterdetail. The process kit 128 includes one or more rings. In theembodiment of FIG. 2, the process kit 128 includes a top ring 202concentrically disposed on a base ring 204. The top ring 202 isfabricated from at least one of silicon, silicon carbide, quartz, orother suitable material. Alternatively, the top ring 202 may befabricated from a base material that is coated with at least one ofsilicon, silicon carbide, quartz or other suitable material. The basering 204 may be fabricated from quartz or other suitable material.

In one embodiment, the process kit 128 includes a conductive layer 206which may be electrically biased in a controllable manner by the controlsystem 150 to provide a tunable electrical potential (e.g., electricalstate) to the process kit 128. In one embodiment, the conductive layer206 is a metal layer located below or on top of the base ring 204. Theconductive layer 206 may be affixed to the base ring 204 or to the topring 202. In another embodiment, the conductive layer 206 is embedded inthe base ring 204 or the top ring 202. The conductive layer 206 may be asolid metal, a foil, a metal mesh or other suitable conductive material.

The conductive layer 206 is coupled to the control system 150 by aconnector 208 and a lead 222. The lead 222 is routed through thesubstrate support assembly 126. In one embodiment, the connector 208 andthe lead 222 are insulated from the cooling base 160 and the lowerelectrode 130 by a suitable insulating material 280. The connector 208interfaces with a bottom of the conductive layer 206 to shield theconnection from the environment within the chamber body 102. The controlsystem 150 is operable to control one or both of the electrical andthermal state of the process kit while disposed on the substrate supportin the internal volume of the chamber body. In one embodiment, theconnector 208 is a conductive pad or spring. The weight of the top ring202 and the base ring 204 on conductive layer 206 creates goodelectrical contact between conductive layer 206 and connector 208. Theconnector 208 may alternatively be a bayonet connector, pin connector orany other suitable electrical connector.

In one embodiment, the control system 150 includes a DC power source 210and a tuning circuit 212 coupled to the connector 208 by the lead 222.The tuning circuit 212 is configured to control various processingparameters of the process kit 128. The tuning circuit 212 is operable tovary its capacitance, inductance, and/or resistance as to set theelectrical bias applied to the process kit 128 by the DC power source210. Additional details about the tuning circuit 212 will be discussedfurther below.

In one embodiment, the control system 150 is coupled to a controller 214to control various states of the processing kit 128. The controller 214,including a central processing unit (CPU) 216, a memory 218, and supportcircuits 220, is coupled to the various components of the processingchamber 100 to facilitate control of plasma processing in the presentinvention. The memory 218 can be any computer-readable medium, such asrandom access memory (RAM), read only memory (ROM), floppy disk, harddisk, or any other form of digital storage, local or remote to theprocessing chamber 100 or the CPU 216. The support circuits 220 arecoupled to the CPU 216 for supporting the CPU 216 in a conventionalmanner. These circuits include cache, power supplies, clock circuits,input/output circuitry and subsystems, and the like. A software routineor a series of program instructions stored in the memory 218, whenexecuted by the CPU 216, controls processes performed the in theprocessing chamber 100 and/or causes the control system 150 to controlthe thermal and/or electrical state of the process kit 128.

In operation, the process kit 128 influences plasma characteristics in aprocessing region 134 which effects etch (or deposition) performanceprocessing at the edges of the substrate 106. By controlling the stateof the process kit 128, for example by controlling an electricalpotential of the process kit 128 by dynamically selecting at least oneof capacitance, impedance and resistance of the tuning circuit 212, theprocess kit 128 can advantageously control the physical attributes ofplasma to provide control of processing at edges of substrate 106. Forexample, applying a negative potential to the process kit 128 will drawpositive species within the plasma outward relative to the edge of thesubstrate 106 and vice versa.

FIG. 3 is another embodiment of a process kit 300 that includes aheating element 306 embedded within a base ring 304 that enables thethermal state of the process kit 300 to be controlled. The heatingelement 306 is coupled to a control system 350. The connection betweenthe heating element 306 and the control system 350 is made through thebottom of the process kit 300 to shield the connection from theprocessing chamber 100 environment. The control system 350 is operableto control the thermal state of the process kit 300. In one embodiment,the control system 350 includes a power source 308 and a filter element310 coupled to the heating element 306. The filter element 310 isconfigured to protect the power source 308 from RF power used to driveplasma.

The control system 350 may optionally also control the electrical stateof the process kit 300. In one embodiment, the control system 350 alsoincludes the DC power source 210 and the tuning circuit 212 to controlthe electrical state of the process kit 300, as described with referenceto FIG. 2. The thermal and electrical states of process kit 300 may beindependently controlled by the control system 350. In one embodiment,the controller 214 controls both the temperature of the heating element306 and the tuning circuit 212 to control plasma processing in theprocessing chamber 100. In an exemplary operation, heating element 306advantageously controls polymer deposition during etching by controllingthe temperature of the process kit 300. For example, a hotter processkit 300 will cause more polymer to stick on the side walls 108 orfeatures being etched near the edges of the substrate 106, thereforecontrolling profile uniformity across the substrate 106.

FIG. 4 is another embodiment of a process kit 400 that includes atemperature control feature 406 embedded within or formed within a basering 404 that enables the thermal state of the process kit 400 to becontrolled. The temperature control feature 406 may be a conduit orpassage for flowing a heat transfer medium, such as a gas, liquid orcombination thereof. The temperature control feature 406 is coupled to acontrol system 450. The control system 450 is operable to control thethermal state of process kit 400. In one embodiment, the control system450 includes a heat transfer medium supply 408 coupled to thetemperature control feature 406. The connection between temperaturecontrol feature 406 and the control system 450 is made through thebottom of the process kit 400 to shield the connection from theprocessing chamber 100 environment. The heat transfer medium supply 408is configured to provide a heat transfer medium at a predefinedtemperature that is circulated through the temperature control feature406 to heat or cool the process kit 400 as desired. In anotherembodiment, the temperature control feature 406 includes an insulatingmaterial 484 disposed at the conductive layer 206. The insulatingmaterial 484 may be a breaker to prevent a short circuit, for example aDC breaker. In another embodiment, the temperature control feature 406includes an RE breaker 482 disposed in the insulating material 280 toprevent a short circuit.

The control system 450 may optionally also control the electrical stateof the process kit 400. In one embodiment, the control system 450 alsoincludes the DC power source 210 and the tuning circuit 212 to controlthe electrical state of the process kit 400, as described with referenceto FIG. 2. The thermal and electrical states of the process kit 400 maybe independently controlled by the control system 450. In oneembodiment, the controller 214 controls both the temperature controlfeature 406 and the tuning circuit 212 to control plasma processing inthe processing chamber 100. In an exemplary operation, the temperaturecontrol feature 406 advantageously controls polymer deposition duringetching by controlling the temperature of the process kit 400. Forexample, a cooler process kit 400 will cause less polymer to stick onthe side walls or feature being etched near the edges of substrate 106,therefore controlling profile uniformity across the substrate 106.

FIG. 5 is another embodiment of a process kit 500 that includes both aheating element 504 and the temperature control feature 406 embeddedwithin the process kit 500 that enables the thermal state of the processkit 500 to be controlled. In one embodiment, the heating element 504 isembedded in a base ring 510. In one embodiment, the heating element 504is a resistive heater. The heating element 504 and the temperaturecontrol feature 406 are coupled to a control system 530. The controlsystem 530, coupled to the heating element 504 and the temperaturecontrol feature 406, is operable to control the thermal state of theprocess kit 500. In one embodiment, the control system 530 includes thepower source 308 and the filter element 310 coupled to the heatingelement 504, as described with reference to FIG. 3. The control system530 also includes the heat transfer medium supply 408 coupled to thetemperature control feature 406, as described with reference to FIG. 4.

The control system 530 may optionally control the electrical state ofthe process kit 500. In one embodiment, the control system 530 alsoincludes the DC power source 210 and the tuning circuit 212 coupled tothe conductive layer 206 to control the electrical state of the processkit 500, as described with reference to FIG. 2. The thermal andelectrical states of process kit 500 may be independently controlled bythe control system 530. In one embodiment, the controller 214 interfaceswith the control system 530 to control the temperature of the heatingelement 504 and the temperature control feature 406 to control thethermal state of the process kit 500. In another embodiment, thecontroller 214 interfaces with the control system 530 to control one orboth of the temperature of the heating element 504 and the temperaturecontrol feature 406 along with the tuning circuit 212 to control thethermal and electrical state of the process kit 500.

Referring back to FIG. 1, a portion 152 of side wall 108 locatedlaterally outward of the processing region 134 may optionally beelectrically controlled relative to other portions of the side walls108, which are grounded. The portion 152 of side wall 108 is bounded byinsulators 142 and 172 that enable the electrical state of the portion152 of the side wall 108 to be controlled. The portion 152 of the sidewall 108 is coupled to a control system 195 operable to control theelectrical state of the portion 152 of the side wall 108. In oneembodiment, the control system 195 includes a power source 146 and atuning circuit 145 coupled to the portion 152 of side wall 108 tocontrol the electrical state of the portion 152 of side wall 108. Thepower source 146 may be a DC power source or an RF power source. Thetuning circuit 145 has the same properties as described above for thetuning circuit 212 with respect to a process kit to control theelectrical state of the portion 152 of the side wall 108 by applying anegative or positive bias to the portion 152 of the side wall 108. It isnoted that process kits 128, 300, 400 and 500 may be utilized in theprocessing chamber 100 having an electrical state of the portion 152 ofthe side wall 108 electrically controlled relative to the grounded stateof the remaining portion of the side wall 108.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

What is claimed is:
 1. A process kit for a plasma processing chamber,the process kit comprising: a top ring; and a base ring adapted toconcentrically support the top ring, the top and base rings having aninside diameter selected to circumscribe a semiconductor wafer, the basering having a connector configured to couple a signal to the base ringfor external control of one or both of a thermal state and an electricalstate of the base ring.
 2. The process kit of claim 1, wherein the basering further comprising: a conductive layer coupled to the connector. 3.The process kit of claim 1, further comprising: a heating elementcoupled to the connector.
 4. The process kit of claim 3, wherein theheating element is embedded in the base ring.
 5. The process kit ofclaim 1, wherein the base ring further comprising: a temperature controlfeature configured to enable the thermal state of the process kit to becontrolled.
 6. The process kit of claim 1 further comprising: aninsulating material disposed on an inside diameter of at least one ofthe base ring and the top ring.
 7. The process kit of claim 1, whereinthe top ring is fabricated from or coated with a material selected fromthe group consisting of silicon, silicon carbide and quartz.
 8. Aprocessing chamber having a dynamically tunable process kit, comprising:a chamber body having a substrate transfer opening and an internalvolume, wherein the chamber body includes a conductive side wall havinga first portion configured to be electrically controlled independentlyfrom remaining portions of the conductive side wall; a substrate supportassembly disposed in the internal volume of the chamber body; and aprocess kit disposed on the substrate support assembly, the process kitcomprising: a top ring; and a base ring adapted to concentricallysupport the top ring, the top and base rings having an inside diameterselected to circumscribe a semiconductor wafer disposed on the substratesupport assembly, the base ring having a connector configured to couplea signal to the base ring for external control of one or both of athermal state and an electrical state of the base ring.
 9. Theprocessing chamber of claim 8 further comprising: a first control systeminterfaced with the process kit through the connector and operable tocontrol one or both of an electrical and thermal state of the processkit; and a second control system interfaced with the first portion ofthe conductive side wall operable to control an electrical state of thefirst portion of the conductive side wall.
 10. The processing chamber ofclaim 8, wherein the process kit is interfaced through the connectorwith a first tuning circuit and a first power source of the firstcontrol system to control the electrical state of the process kit. 11.The processing chamber of claim 10, wherein the first tuning circuit isconfigured to control parameters of an electrical bias supplied by thefirst power source.
 12. The processing chamber of claim 8, wherein theprocess kit further comprises: a heating element coupled to theconnector.
 13. The processing chamber of claim 8, wherein the processkit further comprises: a temperature control feature configured to allowa heat transfer medium to control the thermal state of the process kit.14. The processing chamber of claim 13, wherein the temperature controlfeature is a conduit or passage configured to flow a heat transfermedium.
 15. The processing chamber of claim 8, wherein the first portionof the conductive side wall is interfaced with a tuning circuit and apower source to control an electrical state of the first portion of theconductive side wall.
 16. The process kit of claim 8, wherein the topring is fabricated from or coated with a material selected from thegroup consisting of silicon, silicon carbide and quartz.
 17. A methodfor processing a substrate in a processing chamber comprising:transferring a substrate into the processing chamber having a processkit disposed on a substrate support assembly, the process kitcomprising: a top ring; and a base ring adapted to concentricallysupport the top ring, the top and base rings having an inside diameterselected to circumscribe a semiconductor wafer, the base ring having aconnector configured to couple a signal to the base ring for externalcontrol of one or both of a thermal state and an electrical state of thebase ring; setting one or both of electrical and thermal states of theprocess kit; forming a plasma within the processing chamber; andprocessing the substrate in the presence of the plasma.
 18. The methodof claim 17 further comprising: setting an electrical state of a firstportion of a side wall of the processing chamber independently fromremaining portions of the side wall.
 19. The method of claim 18, whereinsetting the electrical state of the process kit or side wall of theprocessing chamber comprises tuning an electrical bias applied to theprocess kit or the conductive side wall.
 20. The method of claim 19,wherein tuning the electrical bias comprises varying processingparameters comprising: a capacitance, an inductance and a resistance ofthe electrical bias.